Low Noise, Low Current

Band Gap Regulator Design

Tutorial

 

Kevin Aylward B.Sc.

kevin@kevinaylward.co.uk

https://www.kevinaylward.co.uk

05/12/2025

 

 

Abstract

 

This tutorial details how to design a “state of the art” band gap regulator. It assumes that the reader already has a reasonable understanding of analog design. The purpose of this tutorial is only to present knowledge that may not be known in general.

 

Furthermore, in contrast to the bulk of formal academic papers, the approach here is to use the absolute minimum of mathematics, and use simulation to arrive at the optimum results.

 

In the actual real professional engineering world, it’s just a fact of reality, that the vast majority of analog ASIC design is performed entirely in the virtual simulation universe of Cadence. Pages of highbrow, complicated equations so often used in papers, are fundamentally useless in real actual analog design and achieve nothing.

 

What is important, is understanding the global principles, and using simulation to do all of the doggy work.

 

The key design specifications of this tutorial are to achieve low noise with a current vastly lower than any conventional classical topology. Specifically this example design approach achieves:

 

Flat-band noise: 40nv/√hz 

Current:              70ua

 

Which can be compared to commercial products such as:

 

LTC6655

 

Flat-band noise: 35nv/√hz 

Current:              5ma

 

 

Basic Topology

 

The fundamental principle of achieving a voltage that is independent of temperature, is to add two independent voltages, one which has a positive temperature coefficient with one that has a negative coefficient. This is achieved by using a diode and a PTAT.

 

A diode generates a nominal 0.7V with notional linear temperature coefficient of ~ -2mv/deg .

 

A standard PTAT generator of the established literature generates a nominal 50mV with a linear temperature coefficient of ~160uv/deg

 

This means that in order for the VPTAT temperature coefficient to cancel out the temperature coefficient of the diode , a gain of around 12 must be applied to the VPAT voltage

 

This “noise gain” is the fundamental reason why standard Band Gap regulators are relatively noisy.

 

This system is illustrated by this example:

 

 

 

Figure 1 - PTAT Diode Band Gap System Schematic

 

Figure 2 - Band Gap Output Voltage

 

 

Figure 3 - VPTAT & VDiode

 

Figure 4 - VPAT & Diode  Noise – 475 nV/√hz

 

 

The apparent Chicken & Egg issue shown here, is that there is a constant supply powering this system, which, is notionally supposed to provide the constant voltage in the first place. This is only for the purposes to illustrate the principle. In the final design, the power for the blocks is provided by the output of the regulator itself, with an appropriate start-up circuit.

 

Improvements 1

 

Improvements to this system can be made as follows:

 

1                   Increase the ratio of the transistor area to increases the temperature coefficient

 

2                   Change the ratio of the currents in the transistors to increase the temperature coefficient

 

3                   Stack two PTAT cells on top of each other to increase the temperature coefficient

 

These modifications can be made without changing the supply current, and result in the gain of the PTAT being reduced, thereby reducing the output noise, as follows:

 

 

 

Figure 5 - PTAT Diode Band Gap System Schematic Modified

 

Figure 6 - Band Gap Output Voltage Modified

 

Figure 7 - VPTAT & VDiode Modified

 

 

Figure 8 - VPAT & Diode  Noise – 104 nV/√hz

 

The modified design only requires a gain of 2.4 compared to 11.7, resulting in a noise reduction from 475nv/ √hz  to 104nv/ √hz.

 

Improvements 2

Further improvement can be made by adding the voltages of several cells. This takes advantage of the principle that doubling the voltage by adding cells, only multiplies the noise by √2. This is illustrated as followers:

 

Figure 9 – Schematic Doubled VPTAT

 

Figure 10 - 2xVPAT & Diode - Band Gap Output Voltage Modified 2

Figure 11 – 2xVPAT & Diode  - Modified 2 Noise= 48 nV/√hz

 

The gain for the topology of adding of the cell voltages is 1.18, around ˝ of the single cell, which results in the noise being further reduced to 48 nv/√hz.

It is noted that this is achieved by halving the current of each cell so that the total current remains the same. This is to ensure one is comparing apples with apples.

Improvement 3

An additional; improvement can be made to minimise the noise when a nominal 1.23V is stepped up to a nominal voltage of say 2v5.

This is to again take advantage that doubling noise voltages, only increases the noise by √2.

Two diodes can be used to double the nominal output voltage, with additional stages of VPTAT added to compensate for the doubling of the negative slope temperature coefficient.

An example is shown below.

Output voltage =2.48, with a required gain=1.15 and noise=55nV/√hz

Figure 12 – Schematic Quadrupled VPTAT, Doubled Diodes

Figure 13 - Band Gap Output Voltage Modified 3

Figure 14 - 4xVPAT & 2xDiode Modified 2 - Noise = 55 nV/√hz

 

Improvement 4

In an actual design, there is a requirement to connect some stages by current mirrors.

The noise of these notional mirrors can be reduced by noting that they do not have to be strictly mirrors.

This allows the nominal DC gain of the mirror to remain the same at say, 27 degrees, but have a reduced noise gain. For example:

 

 

Figure 15 - PTAT Current Mirror Normal and Lower Noise

 

Figure 16 - PTAT Current Mirror Noise 32nv√hz  & 29nv√hz

 

Full Example

A complete design examples based on these principles in included in the examples of the freeware Spice simulation software, SuperSpice written by this author.

https://www.anasoft.co.uk/

The design uses a differential amplifier with feedback, with 2 Vbe junctions in the feedback forming the negative temperature coefficient Vbe.

The power to the PTAT cells is derived from the regulator output. Cascodes are used at the supply voltage side to ensure a high PSRR.

A nominal process for the design is the XFAB XT018. This process is a BICMOS process with complementary NPN/PNP bipolars, with no RTS noise.

The summary of which is noted here:

IQ = 68ua

Vnoise = 38 nv/ √hz

PSRR DC = 90 dB

PSRR 10kHz to 100Mhz = 80 dB

Figure 17 – Full Example Schematic

 

Figure 18 – Full Example Noise

 

Figure 19 - Full Example VBG v Temperature

 

Figure 20 - Full Example AC PSRR

Figure 21 – Full Example Transient

 

Conclusion

A technique has been described that allows “state of the art” regulators to be achieved. Specifically, achieving low noise at low current.

 

Appendix

It is useful to note that a specific feature of the SuperSpice software was used to set the resister values to achieve exact notional values of current in the cell transistors. This was the “Device Designer Feature”. This allowed the resistors to be told to adjust their value to result in specific currents.

References:

Look them up !!!

Hint: Widlar…